cascadable silicon bipolar mmic amplifiers technical data features ? cascadable 50 w gain block ? 3 db bandwidth: dc to 3.8 ghz ? 12.5 dbm typical p 1 db at 1.0 ghz ? 8.5 db typical gain at 1.0 ghz ? unconditionally stable (k>1) ? cost effective ceramic microstrip package msa-0435, -0436 35 micro-x package [1] description the msa-0435 is a high perfor- mance silicon bipolar monolithic microwave integrated circuit (mmic) housed in a cost effective, microstrip package. this mmic is typical biasing configuration note: 1. short leaded 36 package available upon request. c block c block r bias v cc > 7 v v d = 5.25 v rfc (optional) in out msa 4 1 2 3 designed for use as a general purpose 50 w gain block. typical applications include narrow and broad band if and rf amplifiers in industrial and military applica- tions. the msa-series is fabricated using agilents 10 ghz f t , 25 ghz f max , silicon bipolar mmic process which uses nitride self-alignment, ion implantation, and gold metalli- zation to achieve excellent performance, uniformity and reliability. the use of an external bias resistor for temperature and current stability also allows bias flexibility. available in cut lead version (package 36) as MSA-0436.
2 msa-0435, -0436 absolute maximum ratings parameter absolute maximum [1] device current 100 ma power dissipation [2,3] 650 mw rf input power +13 dbm junction temperature 200 c storage temperature [4] C65 to 200 c thermal resistance [2,5] : q jc = 140 c/w notes: 1. permanent damage may occur if any of these limits are exceeded. 2. t case = 25 c. 3. derate at 7.1 mw/ c for t c > 109 c. 4. storage above +150 c may tarnish the leads of this package making it difficult to solder into a circuit. 5. the small spot size of this technique results in a higher, though more accurate determination of q jc than do alternate methods. see measure- ments section thermal resistance for more information. g p power gain (|s 21 | 2 ) f = 0.1 ghz db 7.5 8.5 9.5 d g p gain flatness f = 0.1 to 2.5 ghz db 0.6 1.0 f 3 db 3 db bandwidth ghz 3.8 input vswr f = 0.1 to 2.5 ghz 1.4:1 output vswr f = 0.1 to 2.5 ghz 1.9:1 nf 50 w noise figure f = 1.0 ghz db 6.5 p 1 db output power at 1 db gain compression f = 1.0 ghz dbm 12.5 ip 3 third order intercept point f = 1.0 ghz dbm 25.5 t d group delay f = 1.0 ghz psec 125 v d device voltage v 4.75 5.25 5.75 dv/dt device voltage temperature coefficient mv/ c C8.0 note: 1. the recommended operating current range for this device is 30 to 70 ma. typical performance as a function of current is on the following page. electrical specifications [1] , t a = 25 c symbol parameters and test conditions: i d = 50 ma, z o = 50 w units min. typ. max. vswr part number ordering information part number no. of devices container msa-0435 10 strip MSA-0436-blk 100 antistatic bag MSA-0436-tr1 1000 7" reel for more information, see tape and reel packaging for semiconductor devices.
3 msa-0435, -0436 typical scattering parameters (z o = 50 w , t a = 25 c, i d = 50 ma) freq. ghz mag ang db mag ang db mag ang mag ang 0.1 .08 175 8.5 2.67 175 C16.4 .151 1 .20 C10 0.2 .08 172 8.5 2.68 170 C16.3 .153 2 .20 C16 0.4 .07 171 8.5 2.67 161 C16.4 .151 3 .20 C33 0.6 .07 166 8.5 2.66 151 C16.2 .155 6 .21 C45 0.8 .05 169 8.4 2.64 142 C16.1 .156 8 .22 C57 1.0 .05 175 8.3 2.61 136 C16.0 .159 10 .24 C68 1.5 .04 C142 8.1 2.55 109 C15.0 .178 13 .26 C96 2.0 .09 C145 7.8 2.46 87 C14.2 .196 15 .28 C123 2.5 .14 C154 7.3 2.33 71 C13.1 .221 18 .31 C140 3.0 .22 C175 6.6 2.14 50 C12.5 .238 14 .33 C160 3.5 .28 170 5.8 1.94 32 C11.7 .260 9 .35 C173 4.0 .34 156 4.8 1.74 15 C11.3 .271 4 .34 C179 4.5 .37 140 3.9 1.57 C1 C10.7 .291 C2 .33 C171 5.0 .42 120 3.0 1.41 C16 C10.4 .302 C8 .32 C160 a model for this device is available in the device models section. s 11 s 21 s 12 s 22 typical performance, t a = 25 c (unless otherwise noted) 0.1 0.3 0.5 1.0 3.0 6.0 0 2 4 6 8 10 12 g p (db) figure 1. typical power gain vs. frequency, t a = 25 c, i d = 50 ma. gain flat to dc v d (v) figure 2. device current vs. voltage. 0 20 40 60 80 i d (ma) 234567 1 t c = +125 c t c = +25 c t c = ?5 c i d (ma) figure 3. power gain vs. current. 4 5 6 7 8 9 g p (db) 20 40 50 60 70 30 5 6 7 5 6 7 8 9 11 10 12 13 8 p 1 db (dbm) g p (db) temperature, ( c) figure 4. output power at 1 db gain compression, nf and power gain vs. case temperature, f = 1.0 ghz, i d =50ma. p 1 db ?5 ?5 +25 +85 +125 g p nf 0.1 0.2 0.3 0.5 2.0 1.0 4.0 frequency (ghz) figure 5. output power at 1 db gain compression vs. frequency. 3 6 9 12 15 18 21 p 1 db (dbm) i d = 70 ma i d = 30 ma i d = 50 ma 4.0 6.0 5.5 6.5 7.0 7.5 nf (db) frequency (ghz) figure 6. noise figure vs. frequency. 0.1 0.2 0.3 0.5 2.0 1.0 nf (db) frequency (ghz) i d = 30 ma i d = 50 ma i d = 70 ma 0.1 ghz 1.0 ghz 2.0 ghz
www.semiconductor.agilent.com data subject to change. copyright ? 1999 agilent technologies 5965-9575e (11/99) 35 micro-x package dimensions 13 4 2 ground dia. ground rf output and bias rf input .085 2.15 .083 2.11 .020 .508 .100 2.54 .455 .030 11.54 .75 .006 .002 .15 .05 notes: (unless otherwise specified) 1. dimensions are in 2. tolerances in .xxx = 0.005 mm .xx = 0.13 mm .022 .56 .057 .010 1.45 .25 a04
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